Microscopic theory of substrate-induced gap effect on real AFM susceptibility in graphene

Abstract

We address here a tight-binding model study of frequency-dependent real part of antiferromagnetic susceptibility for the graphene systems. The Hamiltonian consists of electron hopping upto third nearest-neighbours, substrate and impurity effects in the presence of electron–electron interactions at A and B sublattices. To calculate susceptibility, we evaluate the two-particle electron Green's function by using Zubarev's Green's function technique. The frequency-dependent real part of antiferromagnetic susceptibility of the system is computed numerically by taking \(1000 \times 1000\) grid points of the electron momentum. The susceptibility displays a sharp peak at the neutron momentum transfer energy at low energies and another higher energy peak appearing at substrate-induced gap. The evolution of these two peaks is investigated by varying neutron wave vector, Coulomb correlation energy, substrate-induced gap, electron hopping integrals and A- and B-site electron doping concentrations.

http://ift.tt/2s6BMWW